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“EBSD fundamentals and challenges in the investigation of semiconductor materials”学术报告通知

时间:2013-10-18 15:48

      材料实验室邀请了德国EBSD测试分析技术专家Dr. Gert Nolze在我院作学术报告,欢迎广大师生参加。附件为Dr. Gert Nolze简历。

      时间:10月25日(周五)上午9:00

      地点:西大楼四楼会议室

      报告题目:EBSD fundamentals and challenges in the investigation of semiconductor materials


      报告内容: Electron backscatter diffraction (EBSD) becomes more and more a standard tool in characterization of crystalline materials. For a reliable interpretation of EBSD data, it is necessary to understand the related crystallographic and physical fundamentals and standard presentation tools. The talk will give a brief introduction to EBSD and will discuss the feasibilities and limitations of the technique. Although EBSD is mainly developed for metals and alloys due to their conductivity, it’s adaptable also for non-metallic samples such as minerals, ceramics, and semiconductors and so on. Some specific problems like pseudo-symmetry or polarity determination will also be discussed.

Dr. Gert Nolze简历


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                                                                                      2013年10月18日